July 8, 2025 /SemiMedia/ — ROHM has launched a new 30V N-channel MOSFET, the AW2K21, featuring an ON-resistance of just 2.0mΩ (typ.) in a 2.0mm × 2.0mm package. The component integrates two MOSFETs in a single unit, enabling bidirectional protection for power supply and charging circuits in compact devices.

With rising demand for fast-charging in smartphones, tablets, and wearables, device makers are seeking components that support high current transfer with minimal board footprint. Typical solutions use two larger low-RDS(on) MOSFETs, which increase design complexity and board area. ROHM's AW2K21 addresses this challenge by combining a proprietary structure with WLCSP packaging, optimizing chip-to-package area ratio and significantly reducing ON-resistance per unit area.

Compared to standard solutions using two 3.3mm × 3.3mm MOSFETs, the AW2K21 reduces PCB space by around 81% and cuts ON-resistance by 33%. Even versus similarly sized GaN HEMTs, the device achieves up to 50% lower ON-resistance, supporting high-efficiency power delivery in space-constrained designs.

ROHM also plans to release a 1.2mm × 1.2mm version to further push miniaturization boundaries. The AW2K21 is additionally suitable for use in unidirectional load switch applications, maintaining its industry-best ON-resistance.

Typical use cases include smartphones, tablets, laptops, wearables, VR headsets, portable gaming consoles, drones, compact printers, and LCD monitors—essentially, any compact device requiring fast-charging support.

For more information, visit: https://www.rohm.com/products/mosfets/small-signal/dual/aw2k21-product