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Home › Distribution › Renesas debuts Gen IV Plus 650V GaN FETs for high-power server and energy applications
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Renesas debuts Gen IV Plus 650V GaN FETs for high-power server and energy applications

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July 7, 2025

July 7, 2025 /SemiMedia/ — Renesas Electronics has introduced a new line of 650V Gen IV Plus GaN FETs aimed at high-efficiency power delivery in AI servers, 800V HVDC systems, EV chargers, UPS backups, energy storage systems, and solar inverters. Designed for multi-kilowatt applications, the new FETs (TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS) offer enhanced performance and thermal flexibility in TOLT, TO-247, and TOLL packages.

Built on the SuperGaN® platform developed by Transphorm — acquired by Renesas in mid-2024 — these normally-off d-mode FETs feature a smaller die size and reduced RDS(on) of 30mΩ. Compared to Si and SiC counterparts, they provide higher switching efficiency through lower gate charge, reduced output capacitance, and minimized crossover losses. With a higher 4V threshold voltage, these devices outperform enhancement-mode GaN in stability and thermal tolerance.

The new generation brings a 14% die size reduction and 20% improvement in the on-resistance/capacitance figure of merit, translating to improved power density and system cost savings. These devices support easy integration into existing designs and enable parallel configurations for systems above 10kW, while allowing simplified gate drive compatibility with standard silicon drivers.

“Our Gen IV Plus series marks a major step following the Transphorm acquisition,” said Primit Parikh, VP of Renesas' GaN Business Division. “We aim to deliver comprehensive power solutions by integrating our controllers and drivers with SuperGaN for best-in-class efficiency and compactness.”

GaN-based power semiconductors are seeing rapid adoption across data centers, EVs, and industrial systems. Unlike many competitors focused on low power, Renesas offers both low- and high-power GaN solutions. With over 20 million devices shipped and 300 billion operational hours in the field, Renesas continues to expand its leadership in high-voltage GaN technologies.

The TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS are available now, along with the 4.2kW Totem-pole PFC GaN Evaluation Platform (RTDTTP4200W066A-KIT). More information about Renesas’ GaN solutions is available at: renesas.com/gan-fets.

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AI data center power electronic components news Electronic components supplier Electronic parts supplier energy storage inverters EV charging power GaN FETs Renesas power devices SuperGaN
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