March 26, 2025 /SemiMedia/ — ROHM has introduced the GNP2070TD-Z, a 650V GaN HEMT in a TOLL (TO-LeadLess) package, designed for high-power applications in industrial equipment and automotive systems. The package manufacturing is outsourced to ATX SEMICONDUCTOR (WEIHAI) CO., LTD. (ATX), a leading OSAT provider.

With the increasing demand for energy efficiency in motors and power supplies, wide bandgap semiconductors like SiC and GaN are driving advancements in power electronics. ROHM has been at the forefront of this shift, having launched its first-generation 650V GaN HEMTs in April 2023, followed by power stage ICs integrating a gate driver and GaN HEMT in a single package.

The newly released GNP2070TD-Z incorporates second-generation GaN-on-Si technology in a TOLL package, expanding ROHM’s 650V GaN HEMT lineup alongside the existing DFN8080 package. This addresses the growing market demand for more compact and efficient high-power devices.

By integrating second-generation GaN-on-Si chips into the TOLL package, the device achieves industry-leading performance in the critical RDS(ON) × Qoss metric, enabling greater energy efficiency and system miniaturization in high-voltage, high-speed switching applications.

For mass production, ROHM leveraged its vertically integrated production system for chip design and development. Under its December 10, 2024, collaboration, Taiwan Semiconductor Manufacturing Company Limited (TSMC) handles the front-end processes, while ATX manages back-end assembly and testing.

For more information, please visit https://www.rohm.com/products/gan-power-devices/gan-hemt/gnp2070td-z-product.