December 30, 2024 /SemiMedia/ —  Micron is repurposing its recently acquired Taichung factory from AU Optronics into a DRAM manufacturing base to significantly enhance its high-bandwidth memory (HBM) production capacity. The company plans to triple its monthly output from 20,000 wafers to 60,000 wafers by the end of 2025.

To maintain its technological edge, Micron will incorporate extreme ultraviolet (EUV) lithography in its sixth-generation 10nm DRAM design starting in 2025. This advanced technology enables finer and more precise patterns on silicon wafers, critical for producing high-performance memory solutions.

Micron CEO Sanjay Mehrotra expressed confidence in the company’s growth trajectory during its Q3 2024 earnings call. He stated that Micron aims to achieve over 20% market share in the HBM segment by 2024. Current HBM production capacity is expected to reach 20,000 wafers per month by the end of this year, with a goal of scaling to 60,000 wafers monthly by the end of 2024.

Micron's expansion extends beyond the Taichung site, with additional capacity enhancements underway at its Taichung A3 and Taoyuan Fab 11 facilities. A significant portion of new hires will focus on research related to advanced packaging technologies required for HBM.

Amid intensifying competition, South Korean companies Samsung Electronics and SK Hynix are also ramping up their HBM production. Samsung targets a monthly capacity of 170,000–200,000 wafers by the end of 2025, while SK Hynix aims for 140,000 wafers per month.