November 26, 2024 /SemiMedia/ — SK Hynix has announced the mass production of the world’s highest 321-layer 1Tb TLC 4D NAND flash memory. This groundbreaking product represents significant advancements in stacking technology and manufacturing efficiency, with plans to supply customers by the first half of 2025 to meet growing demand for low-power, high-performance storage driven by AI applications.

Compared to its predecessor, the 238-layer NAND, the 321-layer version achieves a 12% increase in data transfer speed and a 13% improvement in read performance, with data read energy efficiency up by more than 10%. During development, SK Hynix introduced an innovative "3-Plug" process, enabling electrical connections through three-step through-hole procedures optimized with subsequent processes. The product also incorporates low-deformation materials and automated alignment correction technology, leveraging experience from the 238-layer platform to minimize process changes and improve overall production efficiency by 59%.

SK Hynix stated that this milestone signals the industry's entry into the era of 300-layer-plus NAND flash, positioning the company to strengthen its competitive edge in AI data center SSDs and edge AI markets.

“By mass producing the world’s first NAND flash with over 300 layers, we not only solidify our leadership in AI storage but also enhance our comprehensive lineup of high-performance memory solutions, including HBM and NAND,” said Choi Jung-dal, Vice President of NAND Development at SK Hynix. “This marks a significant step toward becoming a comprehensive memory supplier for AI applications.”