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Home › Manufacturer › Vishay introduces new 890 nm IR emitting diode with high typical radiant intensity of 235 mW/sr and fast switching times of 15 ns
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Vishay introduces new 890 nm IR emitting diode with high typical radiant intensity of 235 mW/sr and fast switching times of 15 ns

SemiMediaEdit
July 19, 2024

July 19, 2024 /SemiMedia/ -- Vishay Intertechnology, Inc. announced the expansion of its optoelectronic product portfolio with the introduction of new 890 nm high-speed infrared (IR) light-emitting diodes packaged in clear, colorless lead plastic. Based on surface emitter technology, the Vishay TSHF5211 combines an excellent -1.0 mV/K temperature coefficient of VF with higher radiant intensity and faster rise and fall times than previous-generation devices.

The emitter diode released today offers high typical radiant intensity of 235 mW/sr at a 100 mA drive current, which is 50 % higher than previous-generation solutions. With fast switching times of 15 ns, low typical forward voltage of 1.5 V, and a narrow ± 10° angle of half intensity, the device will serve as a high intensity emitter for smoke detectors and industrial sensors. In these applications, the TSHF5211 offers good spectral matching with silicon photodetectors.

RoHS-compliant, halogen-free, and Vishay Green, the device is lead (Pb)-free and capable of lead (Pb)-free soldering up to 260 °C.

Samples and production quantities of the TSHF5211 are available now, with lead times of 20 weeks for large orders.

For more information, please visit https://www.vishay.com/en/product/80343/.

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