May 21, 2026 /SemiMedia/ — Infineon Technologies AG has expanded its CoolGaN™ BDS 40 V G3 bidirectional switch family with the launch of the IGK048B041S and IGK120B041S, targeting compact power designs for smartphones, notebooks and wearable devices.

The new devices are designed to reduce PCB footprint by up to 82% while cutting component count in half by integrating the function of two back-to-back silicon MOSFETs into a single GaN device. The approach helps simplify layouts and improve overall power system efficiency in space-constrained consumer electronics.

Both devices support 5 V gate drive and are offered in ultra-compact WLCSP packages. The IGK048B041S features a 2.1 × 2.1 mm² package, while the IGK120B041S measures 1.7 × 1.2 mm², making them suitable for highly integrated mobile power architectures.

Performance improvements include lower gate charge and reduced leakage current compared with competing solutions. Infineon said gate charge is up to 40% lower, enabling faster switching, lower switching losses and improved efficiency in fast-charging applications.

The larger device delivers 4.2 mΩ RDD(on), while the smaller variant achieves 9 mΩ RDD(on). Drain-to-drain leakage current is reduced by more than 85% versus comparable products, helping lower thermal rise and improve long-term reliability.

Unlike conventional silicon MOSFETs that rely on body diodes, the CoolGaN BDS devices provide true bidirectional voltage and current blocking capability. This feature is particularly important for USB overvoltage protection, load switching and power multiplexing applications where reverse current protection is required.

With the latest additions, Infineon’s CoolGaN BDS 40 V G3 family now includes three products — IGK048B041S, IGK120B041S and the previously released IGK080B041S — covering a broad range of mobile power switching requirements from wearable devices to high-performance notebooks.

Infineon also noted that it has announced more than 40 GaN-related products over the past year and is advancing scalable 300 mm GaN manufacturing, with initial customer samples already shipping.


The IGK048B041S and IGK120B041S are available now. For more information, please visit Medium-voltage GaN bidirectional switches.