July 21, 2023 /SemiMedia/ -- Infineon Technologies AG expands its CoolSiC portfolio with the Silicon Carbide (SiC) CoolSiC™ MOSFET 650 V in TO Leadless (TOLL) packaging, optimized for lowest losses, highest reliability and ease of use in applications such as server SMPS, telecom infrastructure, and energy storage systems and battery formation solutions.

The CoolSiC 650 V high-performance trench-based power SiC MOSFETs are offered in a very granular portfolio to best suit different target applications. The new family comes in a JEDEC-qualified TOLL package featuring a low parasitic inductance, allowing for higher switching frequency, reduced switching losses, good thermal management, and automated assembly. The compact form factor enables efficient and effective usage of the board space, empowering system designers to achieve exceptional power density.

The CoolSiC MOSFETs 650 V showcase remarkable reliability even in harsh environments, making them an ideal choice for topologies with repetitive hard commutation. The inclusion of the innovative .XT interconnect technology further enhances the devices’ thermal performance by reducing the thermal resistance (R th) and thermal impedance (Z th). In addition, the new devices feature a gate threshold voltage (V GS(th)) greater than 4 V for robustness against parasitic turn-on, a robust body diode, and the strongest gate oxide (GOX) in the market resulting in extremely low FIT (failures in time) rates.

While a cut-off voltage (V GS(off)) of 0 V is generally recommended to simplify the driving circuit (unipolar driving), the new portfolio supports a wide driving interval of V GS voltage within the range of -5 V (turn-off) to 23 V (turn-on). This ensures ease-of-use and compatibility with other SiC MOSFETs and standard MOSFET gate-driver ICs. This is paired with higher reliability, reduced system complexity, and the enablement of automated assembly, reducing system and production costs and accelerating time-to-market.

The new CoolSiC MOSFET 650 V in TOLL industrial-grade discretes are available in various drain-source on-resistance (R DS(on)) options from 22 to 83 mΩ and can be ordered now (107, 163 mΩ and 260 mΩ versions will be available on-demand). More information please visit www.infineon.com/coolsic-mosfet-discretes.