May. 9, 2023 /SemiMedia/ -- ROHM recently announced that it has started mass production of 650V GaN (Gallium Nitride) HEMTs GNP1070TC-Z and GNP1150TCA-Z, which are optimized for a wide range of power system applications. These new products are jointly developed with Ancora Semiconductors, Inc., an affiliate of Delta Electronics, Inc., that develops GaN devices.
Improving the efficiency of power supplies and motors, which account for most of the world’s electricity consumption, has become a significant hurdle to achieving a decarbonized society. The adoption of new materials such as GaN and SiC are key to improving the efficiency of power supplies.
After initiating mass production of 150V GaN HEMTs – featuring a gate breakdown voltage of 8V in 2022 – in March 2023 ROHM established control IC technology for maximizing GaN performance. This time, ROHM developed 650V GaN HEMTs featuring market-leading performance that contributes to higher efficiency and smaller size in a wider range of power supply systems.
The GNP1070TC-Z and GNP1150TCA-Z deliver industry-leading performance in terms of RDS(ON) × Ciss / RDS(ON) × Coss, a figure of merit for GaN HEMTs, translating to higher efficiency in power supply systems. At the same time, a built-in ESD protection element improves electrostatic breakdown resistance up to 3.5kV, leading to higher application reliability. GaN HEMTs’ high-speed switching characteristics also contribute to greater miniaturization of peripheral components.