onsemi recently announced the inauguration of its silicon carbide (SiC) facility in Hudson, New Hampshire. The inauguration of the facility, which was attended by a number of dignitaries led by U.S. Secretary of Commerce Gina Raimondo, marked the event and the importance of U.S. semiconductor manufacturing.

The site will increase the company’s SiC boule production capacity by five times year-over-year and almost quadruple the number of its employees in Hudson by the end of 2022. The expansion gives onsemi full control of its silicon carbide manufacturing supply chain, starting with the sourcing of silicon carbide powder and graphite raw material to the delivery of fully packaged SiC devices. This allows onsemi to provide its customers with the assurance of supply required to meet rapidly growing demand for SiC-based solutions. SiC is critical for enabling efficiency in electric vehicles (EVs), EV charging, and energy infrastructure and is an important contributor on the path to decarbonization. The SiC total addressable market is projected to grow from $2B in 2021 to $6.5B in 2026, at a compound annual growth rate of 33%.

“In addition to market-leading efficiency of our products, our end-to-end vertically integrated solution in a supply-constrained environment is a compelling and differentiated competitive advantage,” said Simon Keeton, executive vice president and general manager Power Solutions Group at onsemi. “We have already expanded to a second building as we increased our substrate capacity and plan to continue ramping, allowing us to source our own cutting-edge SiC wafers for customer products.”