Today, Infineon announced that its 1200 V Series Hybrid Silicon Carbide (SiC) and Insulated Gate Bipolar Transistor (IGBT) power modules are available in the EasyPACK 2B package in ANPC topology and are now available for order.
Infineon said that this module optimizes the loss sweet spots of the CoolSiC MOSFET and TRENCHSTOP IGBT4 chipset, with higher power density and switching frequency up to 48 kHz, especially suitable for the new generation 1500 V solar photovoltaic and energy storage applications.
The new ANPC topology supports more than 99% system efficiency. Compared to devices with lower switching frequencies, the new module can achieve smaller coils in the DC/AC stage of a 1500 V solar in-line converter, so the weight will be much lower than the corresponding inverter with all-silicon components. In addition, the loss of using silicon carbide is less than the loss of silicon, which can reduce the heat of discharge and reduce the size of the heat sink. Overall, it helps to create a more compact inverter and saves system costs.
