April 2, 2025 /SemiMedia/ — STMicroelectronics (ST) and Innoscience announced on April 1 the signing of a GaN technology development and manufacturing agreement aimed at enhancing GaN power device competitiveness and supply chain resilience.

Under the agreement, the two companies will jointly advance GaN power technology and promote its adoption in consumer electronics, data centers, automotive, and industrial power applications. Additionally, the partnership includes a flexible manufacturing arrangement: Innoscience will leverage ST’s front-end fabrication capacity outside China, while ST will utilize Innoscience’s manufacturing facilities in China to optimize supply chains and expand market reach.

GaN power devices offer high efficiency, reduced energy loss, and miniaturization advantages, setting new standards in power conversion, motion control, and drive systems. The technology is already widely used in consumer electronics, data centers, photovoltaic inverters, and industrial power supplies. Its lightweight nature is also driving its adoption in next-generation electric vehicle powertrain designs.

Marco Cassis, President of ST’s Analog, Power, and Discrete, MEMS, and Sensors (APMS) Group, highlighted that as vertically integrated device manufacturers (IDMs), ST and Innoscience can maximize the benefits of the IDM model. This collaboration will accelerate GaN technology deployment, enhance ST’s existing silicon and SiC portfolio, and support global customers with a flexible manufacturing strategy.

Dr. Weiwei Luo, Chairman of Innoscience, emphasized the critical role of GaN technology in enabling smaller, more efficient, and lower-carbon electronic systems. Innoscience was the first to mass-produce 8-inch silicon-based GaN wafers and has shipped over 1 billion GaN devices. This partnership will further drive GaN technology adoption and advance next-generation GaN innovations.