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SK hynix completes Wuxi DRAM fab upgrade, enabling advanced 1a process production

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January 22, 2026

January 22, 2026 /SemiMedia/ — SK hynix has completed the process upgrade at its Wuxi DRAM fab in China, moving from the 1z process to the more advanced 1a process. The Wuxi plant serves as a key production hub, accounting for 30% to 40% of the company’s overall DRAM output.

The fab’s 12-inch wafer capacity is around 180,000 to 190,000 wafers per month, with roughly 90% of production now using the 1a process. The upgrade was first announced at SK hynix’s earnings briefing in January 2024 and took approximately two years to complete.

With the completion of this upgrade, SK hynix can now mass-produce higher-performance DRAM products at the Wuxi facility, strengthening its position in the global DRAM market and improving supply capacity for high-performance memory products.

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DRAM production Electronic components distributor electronic components news memory chip upgrade Semiconductor manufacturing SK Hynix
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