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Home › MarketWatch › Nexperia and Aurobay Explore GaN and SiC Collaboration for Next-Generation Electrified Powertrains
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Nexperia and Aurobay Explore GaN and SiC Collaboration for Next-Generation Electrified Powertrains

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September 4, 2026

September 4, 2026 / SemiMedia / — Nexperia announced plans to explore a strategic collaboration with Aurobay Technologies on advanced power semiconductor solutions for automotive applications, combining Nexperia's gallium nitride (GaN) and silicon carbide (SiC) technologies with Aurobay's powertrain system design and integration capabilities.

Aurobay Technologies is a division of Horse Powertrain, the powertrain joint venture between Renault Group and Geely. The proposed collaboration builds on an existing project in which Nexperia's GaN devices were deployed in Aurobay's highly integrated power generation system for range-extender applications.

According to Nexperia, the project demonstrated the potential of wide-bandgap semiconductors to improve efficiency, reduce system size and weight, and enhance performance in demanding automotive environments.

The companies will now assess opportunities to further optimize power electronics architectures for applications including traction inverters and power generation systems. The work is expected to include early-stage co-design and system-level optimization, bringing semiconductor development more closely together with powertrain requirements.

As automakers seek higher efficiency, greater power density and more compact electrified powertrains, GaN and SiC technologies are taking a larger role in automotive power electronics.

Nexperia said closer cooperation with Aurobay will help it better understand system-level requirements and evaluate how its wide-bandgap semiconductor technologies can support future electrified and hybrid vehicle platforms.

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