Toshiba Electronic Devices & Storage Corporation (“Toshiba”) announced on March 11 that it will expand the production capacity of power devices by building a 300mm wafer fabrication facility at Kaga Toshiba Electronics Corporation in Japan. Mass production on the new line will start in the first half of fiscal year 2023.
Toshiba has until now met demand by expanding production capacity on a 200mm wafer facility at Kaga Toshiba Electronics Corporation. The company will construct the new 300mm facility in a building on the same site that currently houses a 200mm line. The new 300mm line will be used to manufacture low-voltage metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs).
Toshiba will make decisions on further investments to increase output in line with market conditions. It will also continue to expand production of discrete semiconductors, including power devices, at Japan Semiconductor Corporation, a manufacturing subsidiary that mainly produces system LSIs.
