Renesas Electronics has announced the first plastic packaged radiation-tolerant PWM controller and GaN FET driver for DC/DC power supplies for small satellites and launch vehicles. The ISL71043M single-ended current mode PWM controller and the ISL71040M low-side GaN FET driver are ideal for isolated flyback and half-bridge power stages as well as motor control driver circuits in satellite buses and payloads.
The ISL71043M PWM controller is housed in a small 4mm x 5mm SOIC plastic package that provides fast signal propagation and output switching, consuming only one-third the PCB area of a competitor's ceramic package. In addition, the ISL71043's 5.5mA maximum supply current reduces power loss by more than three times, and its adjustable operating frequency (up to 1 MHz) enables higher efficiency and uses smaller passive filter components.
The ISL71040M low-side GaN FET driver safely drives Renesas' radiation-resistant GaN FETs in both isolated and boost configurations. The ISL71040M operates from a supply voltage range of 4.5V to 13.2V and a gate drive voltage (VDRV) of 4.5V, including both inverting and non-inverting inputs. The device's split output regulates the turn-on and turn-off speeds, and its high current source and sink capability enable high frequency operation.
Both the ISL71043M and ISL71040M operate over an extended temperature range of -55°C to +125°C.
“The ISL71043M and ISL71040M, as well as our GaN FETs and digital isolators, offer customers a size and cost optimized power solution for large, small constellations,” said Philip Chesley, vice president of industrial analog and power business at Renesas Electronics. “Renesas' radiation-tolerant plastic packaging process and cutting-edge IC technology provide new space customers with the best cost and radiation performance for a low-Earth orbit 5-year mission profile.”