February 2, 2026 /SemiMedia/ — Vishay Intertechnology has introduced a new range of 1200-volt silicon carbide (SiC) MOSFET power modules aimed at improving efficiency in medium- to high-frequency power applications used across automotive, energy and industrial markets.

The newly released modules — VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120 and VS-SF200SA120 — are built using Vishay’s latest SiC MOSFET technology and are housed in the industry-standard SOT-227 package. The lineup supports both single-switch and low-side chopper configurations.

Each module integrates a SiC MOSFET with a soft recovery body diode, helping reduce reverse recovery and switching losses. The design is intended to support power conversion systems such as solar inverters, electric vehicle chargers, DC/DC converters, uninterruptible power supplies, energy storage systems and telecom power units.

By adopting the SOT-227 package, the modules can be used as drop-in replacements in existing designs, allowing system makers to upgrade to SiC technology without redesigning printed circuit boards. The molded package also provides electrical insulation rated at 2,500 volts for one minute, reducing the need for additional insulation between the module and heatsink.

The devices offer continuous drain current ratings ranging from 50 amps to 200 amps and on-resistance as low as 12.1 milliohms. They are rated for operation at junction temperatures of up to 175 degrees Celsius and comply with RoHS environmental standards.

Vishay said samples and production volumes of the new SiC power modules are available, with typical lead times of around 13 weeks.

For more information, please visit VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120.