September 8, 2025 /SemiMedia/ — Samsung Electronics has resumed construction of its fifth fab in Pyeongtaek, South Korea, aiming to secure production capacity for next-generation high-bandwidth memory (HBM4) as demand for AI chips accelerates.

The company is preparing to restart investment as early as October, with workers already conducting steel frame installation and safety training at the site. The P5 project, initially delayed last year amid weak semiconductor demand, is now back on track as memory makers race to expand advanced capacity.

Samsung plans to leverage the plant to scale supply of HBM, a high-performance memory that stacks multiple DRAM dies to boost bandwidth. The company is expected to clear NVIDIA’s qualification tests for HBM3E soon, paving the way for mass shipments, while positioning itself to deliver HBM4 for NVIDIA’s next-generation Rubin AI GPUs.

Although Samsung trails SK hynix by roughly three months in HBM development, it intends to close the gap by expanding output. Part of that plan includes deploying 1c DRAM, a 10nm-class node, on unused P4 fab lines for HBM4 production. The company has completed internal approval and is ready to begin sample output for customer evaluations.

Industry analysts say memory demand is set to recover in 2025, with HBM driving much of the growth. KB Securities forecasts Samsung will complete the Pyeongtaek expansion in the first quarter of next year, with initial HBM4 production likely to begin in the fourth quarter, supporting a larger market share in 2026.