October 28, 2024 /SemiMedia/ — Infineon Technologies AG addresses the growing need for higher power levels with minimized power losses in industrial applications by introducing the CoolSiC™ Schottky diode 2000 V G5. This is the first discrete silicon carbide diode on the market with a breakdown voltage of 2000 V. The product family is designed for applications with DC link voltages up to 1500 VDC and offers current ratings from 10 to 80 A, making it suitable for higher DC link voltage needs in sectors such as solar energy systems and EV charging stations.

The product family comes in a TO-247PLUS-4-HCC package, with 14 mm creepage and 5.4 mm clearance distance. This, together with a current rating of up to 80 A, enables a significantly higher power density. It allows developers to achieve higher power levels in their applications with only half the component count of 1200 V solutions. This simplifies the overall design and enables a smooth transition from multi-level topologies to 2-level topologies.

In addition, the CoolSiC Schottky diode 2000V G5 utilizes the .XT interconnection technology that leads to significantly lower thermal resistance and impedance, enabling better heat management.   Furthermore, the robustness against humidity has been demonstrated in HV-H3TRB reliability tests. The diodes exhibit neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enhanced system performance.

The 2000 V diode family is a perfect match for the CoolSiC MOSFETs 2000 V in the TO-247Plus-4 HCC package that Infineon introduced in spring 2024. The CoolSiC diodes 2000 V portfolio will be extended by offering them in the TO-247-2 package, which will be available in December 2024. A matching gate driver portfolio is also available for the CoolSiC MOSFETs 2000 V.

The CoolSiC Schottky Diode 2000 V G5 family in TO-247PLUS-4 HCC is available now. An evaluation board for product family is also available. For more information, please visit www.infineon.com/CoolSiC-diode-2kV.