May 29, 2024 /SemiMedia/ -- According to reports, Micron plans to spend 600 to 800 billion yen to build a new DRAM memory wafer factory in Hiroshima, Japan, and will receive a subsidy of up to 192 billion yen from the Ministry of Economy, Trade and Industry of Japan.

The wafer fab will introduce EUV lithography machines and is scheduled to start construction in early 2026, with production expected to begin in late 2027.

The report pointed out that Micron will officially introduce EUV lithography technology in the next-generation 1-gamma (nm) node that will be mass-produced in 2025. Considering the generation cycle of the DRAM industry, Micron will enable its new Hiroshima plant to have the ability to produce 1-gamma and even 1-delta DRAM by then.

Micron originally planned to start operating the new wafer fab this year so that it could expand its 1-gamma DRAM manufacturing capacity as soon as mass production begins in 2025. However, due to the previous recession in the semiconductor industry, especially in the memory field, Micron adjusted its investment plan and slowed down the pace of capacity expansion.