SK Hynix announces 176-layer NAND flash
SK Hynix announced that it has successfully developed 176-layer 4D NAND flash memory, which is the company's third-generation 4D NAND product.
SK Hynix said that compared with the previous generation of 128-layer products, the bit productivity of this product has increased by more than 35%, thereby enhancing cost competitiveness.
In addition, the product uses a new 2-division cell array selection technology, the cell reading speed is 20% higher than the previous generation, the data transmission rate is increased by 33%, and the transmission speed is 1.6Gb per second.
SK hynix has started sampling a 512Gbit TLC part to SSD controller companies for developing compatible firmware and plans to start mass production in the middle of next year.
The article is originally written by @SemiMediaEdit posted on SemiMedia. All rights reserved.