SemiMedia SemiMedia
  • Breaking News
  • MarketWatch
  • Distribution
  • Manufacturer
  • Video
  • About us
Home › MarketWatch › Winbond invests $10.9 billion in 12-inch fabs for DRAM and NOR Flash Memory
  • 0

Winbond invests $10.9 billion in 12-inch fabs for DRAM and NOR Flash Memory

SemiMediaEdit
October 2, 2018

Memory chip maker Winbond announced that it will invest approximately $10.9 billion to build a 12-inch fab. According to the plan, the plant will break ground on October 3 and is expected to be completed by 2020, which will create 2,500 high-tech jobs.

The new plant will be built in Kaohsiung, Taiwan. It is reported that Winbond considered Singapore when it was sited. The Singapore government also gave very favorable policy conditions, but Winbond chose Kaohsiung City, and Kaohsiung City Government also promised to Winbond that It will assist them in solving investment problems and speeding up other processes so that the new plant can be put into production as quickly as possible.

It is expected that after the completion of the new plant in 2020, DRAM and NOR Flash Memory will be put into production.

Related

Electronic component news Winbond
Micron appoints Mike Bokan as Senior Vice President of Worldwide Sales
Previous
SMIC accelerates development, 14nm will be mass-produced in the first half of 2019
Next

All Comments (0)

Back
No Comment.

Top Post

Mouser Electronics expands to the Philippines with local customer service center
Fire broke out at AKM factory in Japan
Qualcomm ranked first in the world's top ten IC design companies
Analyze the key factors and prospects of electronic components shortage from the perspective of wafer industry
TSMC’s CoWoS capacity to reach 75,000 wafers/month by end-2025
onsemi expects to produce 200mm SiC wafers by 2025

Subscribe SemiMedia

Please check your E-mail to confirm the subscribtion.

Related posts

Japan to invest 250 billion yen more in Rapidus to advance 2nm push

Japan to invest 250 billion yen more in Rapidus to advance 2nm push

March 2, 2026
0
Micron opens first India OSAT plant to expand memory backend network

Micron opens first India OSAT plant to expand memory backend network

March 2, 2026
0
Samsung to phase out 2D NAND at Hwaseong line, shift to 1c DRAM

Samsung to phase out 2D NAND at Hwaseong line, shift to 1c DRAM

March 2, 2026
0
Samsung memory price hike to Apple highlights tight LPDDR5X supply

Samsung memory price hike to Apple highlights tight LPDDR5X supply

February 27, 2026
0
Copyright © 2017-2026 SemiMedia. Designed by nicetheme.
  • Please set up your first menu at [Admin -> Appearance -> Menus]
  • electronic components news
  • Electronic components supplier
  • Electronic parts supplier
  • Infineon
  • Electronic component news
  • Renesas
  • Vishay
  • STMicroelectronics
  • NXP
  • TDK

SemiMediaEdit

Administrator