Today, Samsung Electronics announced that the 1TB eUFS2.1 has officially entered the mass production phase.

The product uses Samsung’s fifth-generation V-NAND technology. In the same package size (11.5mm x 13.0mm), the 1TB eUFS solution combines 16 stacked 512Gb V-NAND flash memories with a newly developed proprietary flash controller, double the capacity of the previous 512GB version. The new eUFS speeds up to 1,000MB/s per second, with random reads and writes of 58,000 IOPS and 50,000 IOPS, a 38% increase over 512GB.

Samsung plans to expand its fifth-generation 512Gb V-NAND production at its Pyeongtaek facility in South Korea in the first half of 2019 to fully meet the strong demand of global mobile device manufacturers for 1TB eUFS.