On September 22, Intel held a launch ceremony for its second phase of the Dalian Non-Volatile Memory (NVM) Factory. Intel Global Vice President, General Manager of Intel Semiconductor (Dalian) Co., Ltd. Liang Zhiquan and local government officials attended the event. At the launching ceremony, Intel announced that the new non-volatile memory phase II project will be used to mass produce the world's most advanced 96-layer 3D NAND memory chips.
In July 2006, Intel Asia Holdings Limited and the Dalian Municipal Government signed a general development agreement to build a 60-hectare Intel Semiconductor (Dalian) Co., Ltd. in Dalian for the development and production of logic chips. In October 2015, Intel Phase II project settled in Dalian. In October 2017, Intel Corporation announced an investment of US$5.5 billion to upgrade the Dalian plant to the world's most advanced non-volatile memory manufacturing facility. This project is Intel's largest investment in China to date, at the same time, it took only nine months from the groundbreaking to the completion of the project, which is the fastest project built by Intel.
Robert Crooke, Intel's senior vice president and general manager of the NVM solution group, called the project "the result of Intel's concerted efforts with provincial and municipal governments and excellent support from all levels of government. It is also a model for successful collaboration between Intel's global collaborators and suppliers.”
